Vertically Stacked Transparent Organic Photodetectors for Light Intensity-Independent Wavelength Recognition.

Wavelength recognition is one of the important functions of photodetectors. However, wavelength recognition of the reported photodetectors generally depends on light intensity, which limits the practical applications. Here, a light intensity-independent wavelength recognition scheme based on vertically stacked transparent photodetectors is reported. By analyzing light intensity attenuation behavior in the multiple stacked photodetectors, the wavelength of incident light can be accurately determined. Due to the high transparency of the detectors, the multiple stacked detectors allow incident light to pass through. Meanwhile, since the attenuation coefficients at different wavelengths are attributed to the detector's absorption characteristics, the intensity of incident light and its wavelength can be determined by analyzing the attenuation coefficients measured through each stacked detector. Consistent wavelength values obtained at different light intensities verify the light intensity-independence of the multistacked detector system.

Tuning Charge Carrier and Spin Transport Properties via Structural Modification of Polymer Semiconductors.

Targeted design of organic semiconductors in organic spintronics is relatively limited. Therefore, four conjugated polymers with analogous structures based on isoindigo (IID) units were designed and synthesized to investigate the structure-property relationships in spin and charge carrier transport. Structural design strategies include introduction of pyridinic nitrogen atoms into IID units to change electronic structures and alteration of different branching points of alkyl chains to adjust the aggregation structure. By fabricating polymer field-effect transistors (PFETs) and organic spin valves (OSVs), all of the polymers exhibited good ambipolar field-effect properties (all of the mobilities exceeding 0.3 cm2 V-1 s-1) and relatively high magnetoresistance (MR) values (maximum up to 25%). Most importantly, it is found that the introduction of pyridinic nitrogen into the IID units can improve MR values of OSVs and electron mobilities of PFETs, whereas the extension of alkyl chain branching points can reduce MR values of the conjugated polymers. This work is the first attempt to thoroughly study the structure-property relationship in the OSVs, combined with molecular design of the conjugated polymers, which provides a guideline for molecular engineering, especially for organic spintronics.

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate.

Direct chemical vapor deposition growth of high quality graphene on dielectric substrates holds great promise for practical applications in electronics and optoelectronics. However, graphene growth on dielectrics always suffers from the issues of inhomogeneity and/or poor quality. Here, we first reveal that a novel precursor-modification strategy can successfully suppress the secondary nucleation of graphene to evolve ultrauniform graphene monolayer film on dielectric substrates. A mechanistic study indicates that the hydroxylation of silica substrate weakens the binding between graphene edges and substrate, thus realizing the primary nucleation-dominated growth. Field-effect transistors based on the graphene films show exceptional electrical performance with the charge carrier mobility up to 3800 cm2 V-1 s-1 in air, which is much higher than those reported results of graphene films grown on dielectrics.

Protection of centre spin coherence by dynamic nuclear spin polarization in diamond.

We experimentally investigate the protection of electron spin coherence of a nitrogen-vacancy (NV) centre in diamond by dynamic nuclear spin polarization (DNP). The electron spin decoherence of an NV centre is caused by the magnetic field fluctuation of the (13)C nuclear spin bath, which contributes large thermal fluctuation to the centre electron spin when it is in an equilibrium state at room temperature. To address this issue, we continuously transfer the angular momentum from electron spin to nuclear spins, and pump the nuclear spin bath to a polarized state under the Hartmann-Hahn condition. The bath polarization effect is verified by the observation of prolongation of the electron spin coherence time (T). Optimal conditions for the DNP process, including the pumping pulse duration and repeat numbers, are proposed by numerical simulation and confirmed by experiment. We also studied the depolarization effect of laser pulses. Our results provide a new route for quantum information processing and quantum simulation using the polarized nuclear spin bath.

A training effect on electrical properties in nanoscale BiFeO3.

We report our observation of the training effect on dc electrical properties in a nanochain of BiFeO3 as a result of large scale migration of defects under the combined influence of electric field and Joule heating. We show that an optimum number of cycles of electric field within the range zero to ~1.0 MV cm(-1) across a temperature range 80-300 K helps in reaching the stable state via a glass-transition-like process in the defect structure. Further treatment does not give rise to any substantial modification. We conclude that such a training effect is ubiquitous in pristine nanowires or chains of oxides and needs to be addressed for applications in nanoelectronic devices.